| Autor: |
Wang, Shi Jiun, Yang, Chih-An, Lin, Burn Jeng, Lin, Chrong Jung, King, Ya-Chin |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Sep2021, Vol. 68 Issue 9, p4651-4655, 5p |
| Abstrakt: |
A novel electron beam detector made on Si wafers by the advanced CMOS FinFET processes has been proposed in this study. Through electron beam (e-Beam) charging of on-wafer sensing pads, electron dosage can be registered on the detector for follow-up read-out. Without external power or battery connections, this detector has successfully delivered on-chip dosage, intensity, and energy after e-Beam exposure. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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