| Autor: |
Wehrer, R. J., Wanlass, M. W., Taylor, D., Wernsman, B., Carapella, J. J., Schultz, R. W., Ahrenkiel, S. P., Wilt, D. M., Dashiell, M. W., Siergiej, R. R., Link, S. D., Messham, R. L. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2004, Vol. 738 Issue 1, p445-452, 8p |
| Abstrakt: |
0.52 eV InGaAs/InPAs Thermophotovoltaic (TPV) devices have been grown, fabricated, and characterized. High performance of this material system at this bandgap has been demonstrated for the first time. 57 μA/cm2 reverse saturation current density was measured along with 95% internal quantum efficiency. Due to the buffering design used, no dislocations were detected in the active region of the device by cross-sectional transmission electron microscopy, suggesting defect densities < 107 cm-3 in this highly lattice mismatched (1.6%) material. © 2004 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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