Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application Project supported by the National Natural Science Foundation of China (Grant Nos. 12074046 and 12074115), the Hunan Provincial Natural Science Foundation of China (Grant Nos. 2020JJ4597, 2021JJ40558, and 2021JJ30733), the Scientific Research Fund of Hunan Provincial Education Department, China (Grant Nos. 20K007 and 20C0039), and the Key Projects of Changsha Science and Technology Plan (Grant No. kq1901102)

Autor:	Xie, Hai-Qing, č°˘, ćµ·ćƒ..., Wu, Dan, 伍, 丹, Deng, Xiao-Qing, é‚", ĺ°Źć¸..., Fan, Zhi-Qiang, 范, 志强, Zhou, Wu-Xing, ĺ'¨, äş"星, Xiang, Chang-Qing, ĺ', é•żéť', Liu, Yue-Yang, 刘, 岳阳
Předmět:	FIELD-effect transistors MONOMOLECULAR films PROVINCES SEMICONDUCTOR technology TRANSISTORS
Zdroj:	Chinese Physics B; Nov2021, Vol. 30 Issue 11, p1-6, 6p
Abstrakt:	We preform a first-principles study of performance of 5 nm double-gated (DG) Schottky-barrier field effect transistors (SBFETs) based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS2 contacts. Because of the wide bandgap of SiC, the corresponding DG SBFETs can weaken the short channel effect. The calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for semiconductors. Moreover, the bilayer metallic 1T-phase MoS2 contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying degrees. The above results are helpful and instructive for design of short channel transistors in the future. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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