| Autor: |
Zhalnin, V. P., Zubkova, A. I., Koroleva, Y. P., Shakhnov, V. A., Vlasov, A. I. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2021, Vol. 2402 Issue 1, p1-7, 7p |
| Abstrakt: |
This article gives review about progressive types of memristor structures. Broad development of researches related to artificial intelligence defines the necessity of creating devices for information storage and processing, based on new principles. It's revealed that the devices on the basis of memristors can have the best characteristics. Memristor devices were introduced a little more than ten years ago and nowadays the development of this technology is in the beginning of its way. At this stage, the realization of complex comparison of memristor characteristics is essential with an aim of identifying development trends and defining the most promising directions. Due to this the basic task of this article is the analysis and comparison of broad-spectrum solutions in this field, both constitutive and technological ones. The advanced architectures of memristor structures having widespread occurrence in these days were analysed. More specifically, memristor structures on the basis of titanium dioxide, polymeric, resonant tunneling diode memristors, spin-based and chalcogenide memristors. The comparative analysis of memristor materials was carried out. Parameters of the memristive element, usage peculiarities of specific materials were systematized, and their mutual advantages and disadvantages were found out. After analysing types and materials of memristors, the directions of further works related to this subject and necessity of research on mathematical models of reviewed memristors types, were formulated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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