| Autor: |
Alchaar, R., Bataillon, C., Perez, J.-P., Gilard, O., Christol, P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/14/2021, Vol. 130 Issue 18, p1-6, 6p |
| Abstrakt: |
In this work, we investigated the effects of 63 MeV proton irradiation on the electrical performance of long-wave infrared InAs/GaSb type-II superlattice barrier detectors. The dark current density increase due to displacement dose effects does not exceed a factor of 2.6, regardless of the absorber thickness, when measured after a proton fluence of 8 × 10 11 H + / cm 2 at 100 K. Subsequent analysis showed that the dark current changes behavior after irradiation, and the dominant current is no longer diffusion but generation–recombination and trap-assisted tunneling. Device simulation also allowed us to extract a minority carrier lifetime before and after irradiation, which decreases with increasing fluence as a result of the 63 MeV proton-induced mild material degradation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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