| Autor: |
Karelina, L. N., Hovhannisyan, R. A., Golovchanskiy, I. A., Chichkov, V. I., Ben Hamida, A., Stolyarov, V. S., Uspenskaya, L. S., Erkenov, Sh. A., Bolginov, V. V., Ryazanov, V. V. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/7/2021, Vol. 130 Issue 17, p1-8, 8p |
| Abstrakt: |
We explore the concept of the Josephson magnetic memory element based on a multilayer two-barrier SIsFS Josephson junction storing the digital state by means of the orientation of magnetization in the F-layer. A diluted PdFe alloy with 1 % magnetic atoms is used as a ferromagnet (F), and a tunnel AlO x layer (I) ensures a high voltage in the resistive state. We have studied two junctions of a rectangular shape in which two digital states are defined by the orientation of the residual F-layer magnetization set along or across the junction in the plane of the ferromagnetic barrier. Implementations of both binary and ternary logic elements are demonstrated. A scalability of rectangular memory elements is analyzed using micro-magnetic modeling. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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