| Autor: |
Venu Rajendran, Muthukumar, Ganesan, Saraswathi, Sudhakaran Menon, Vidya, Raman, Rohith Kumar, Alagumalai, Ananthan, Krishnamoorthy, Ananthanarayanan |
| Předmět: |
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| Zdroj: |
Energy Technology; Nov2021, Vol. 9 Issue 11, p1-13, 13p |
| Abstrakt: |
Fermi level tuning and defect passivation at the electron selective layer (ESL)/perovskite interface has a strong effect on the perovskite solar cell (PSC) device performance. Two strategies are commonly used for passivation, 1) bulk passivation—by adding dopants in the ESL and 2) surface passivation—to suppress the interface dangling bonds using ligands. Herein, a novel dual passivation (bulk and surface) strategy is presented by incorporating a simple molecule cesium iodide (CsI) in the SnOx ESL. Passivation effects using different CsI dopant concentrations (0–10 wt%) in SnOx solution were studied and its beneficial role of defect passivation is discussed in detail. A systematic study revealed that the addition of CsI in the SnOx ESL not only significantly influences the open‐circuit voltage (Voc) and fill factor (FF), but also suppresses the recombination at the interface due to its improved built in surface potential. Lower trap‐filled limit voltage (VTFL), trap density (nt), and diode ideality factor (nid) are observed for the CsI incorporated SnOx ESL as compared with the bare SnOx layer which leads to a power conversion efficiency improvement from 14.3% to 15.4%. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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