| Autor: |
Su, Huake, Xu, Shengrui, Tao, Hongchang, Fan, Xiaomeng, Du, Jinjuan, Peng, Ruoshi, Zhao, Ying, Ai, Lixia, Wu, Haoyang, Zhang, Jincheng, Li, Peixian, Hao, Yue |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Sep2021, Vol. 42 Issue 9, p1346-1349, 4p |
| Abstrakt: |
GaN-based light-emitting diodes (LEDs) grown on the insulating sapphire substrate suffer from a severe current crowding effect. To alleviate the current crowding effect, we demonstrate a current spreading structure for 365-nm ultraviolet LED using Fe doping in n-GaN layer. The surface morphology was studied by atomic force microscope, and the crystal quality was evaluated by high-resolution X-ray diffraction, which shows that a thin insertion layer doped with Fe has less influence on the crystalline quality. Additionally, inserting a Fe-doped layer with appropriate doping concentration enables to induce a barrier in the n-type layer, which contributes to the uniform current distribution. As a result, compared with conventional LED, the light output power obtains a 170.6% enhancement at 100 mA. Furthermore, the uniform optical emission distribution is also achieved by inserting a Fe-doped layer. Finally, the conduction band structures and horizontal hole concentration distributions are calculated by Advanced Physical Models of Semiconductor Devices, which illustrates the mechanism of current spreading. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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