| Autor: |
Marinov, O., Deen, M. J., Yu, J., Vamvounis, G., Holdcroft, S., Woods, W. |
| Předmět: |
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| Zdroj: |
IEE Proceedings -- Circuits, Devices & Systems; Oct2004, Vol. 151 Issue 5, p466-472, 7p |
| Abstrakt: |
In this article, the low-frequency noise properties of the polymer field effect transistors (PFET) using polymer semiconducting material have been investigated and discussed in terms of the charge carrier transport. Test structures of polymer thin-film transistors are usually fabricated with the source/drain contacts either below or above the semiconducting polymer film. The degenerately doped substrate serves as the gate electrode for the test devices studied here. A general trend of proportionality between noise power density and the DC power applied to the PFET channel is observed in the data from publications. This trend implies that the mobility fluctuation in the PFET is the dominant noise source. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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