| Abstrakt: |
Ferroelectric field-effect transistors (FeFETs) composed of P(VDF-TrFE) (Poly(Vinylidenefluoride-Tirfluoroethylene)) thin films and semiconductor substrates show excellent ferroelectric transistor characteristics. Since P(VDF-TrFE) has the ferroelectricity as large as those of oxide ferroelectric materials with much lower dielectric constant, it is the ideal material to build FeFET with the combination to inorganic semiconductor material. In addition, the process condition to form P(VDF-TrFE) is much milder to underlying semiconductingmaterial compared to oxide ferroelectrics. Therefore, the improvement on the retention characteristics is expected by employing P(VDF-TrFE) ferroelectrics in FeFET instead of oxide ferroelectrics. The potential of P(VDF-TrFE) FeFET is discussed in this chapter. [ABSTRACT FROM AUTHOR] |
