| Autor: |
Liverini, V., Schän, S., Grange, R., Haiml, M., Zeller, S. C., Keller, U. |
| Předmět: |
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| Zdroj: |
IEE Proceedings -- Optoelectronics; Oct2004, Vol. 151 Issue 5, p437-441, 5p |
| Abstrakt: |
The article reports that semiconductor saturable absorber mirrors (SESAMs) are powerful devices able to passively mode-lock solid-state lasers and to suppress Q-switching instabilities. They are usually grown monolithically either by molecular beam epitaxy or by metalorganic vapour phase epitaxy. Several device designs are possible, however the main components are a distributed Bragg reflector and an absorber layer. The ideal DBRs for these devices are GaAs-based ones because the high contrast in the refractive index of their binary materials allows for a smaller layer number in order to obtain high reflectivity, and because their thermal behaviour is better than that of their InP-based DBRs. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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