| Autor: |
Liu, H. F., Peng, C. S., Likonen, J., Konttinen, J., Dhaka, V. D. S., Tkachenko, N., Pessa, M. |
| Předmět: |
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| Zdroj: |
IEE Proceedings -- Optoelectronics; Oct2004, Vol. 151 Issue 5, p267-270, 4p |
| Abstrakt: |
The article reports that GaAs-based dilute nitrides, such as GaInNAs, have been widely investigated due to their unusual physical properties and their promising applications in devices for optical fibre communications. Many kinds of devices operating around 1:3 mm wavelength based on GaInNAs/GaAs quantum wells (QWs) have been demonstrated in the past few years, such as low-threshold current edge-emitting lasers, vertical-cavity surface-emitting lasers (VCSEL) and saturable Bragg reflectors for mode locking. However, this material system is metastable and difficult to prepare. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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