| Autor: |
Guralnik, Benny, Hansen, Ole, Henrichsen, Henrik H., Beltrán-Pitarch, Braulio, Østerberg, Frederik W., Shiv, Lior, Marangoni, Thomas A., Stilling-Andersen, Andreas R., Cagliani, Alberto, Hansen, Mikkel F., Nielsen, Peter F., Oprins, Herman, Vermeersch, Bjorn, Adelmann, Christoph, Dutta, Shibesh, Borup, Kasper A., Mihiretie, Besira M., Petersen, Dirch H. |
| Předmět: |
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| Zdroj: |
Review of Scientific Instruments; Sep2021, Vol. 92 Issue 9, p1-6, 6p |
| Abstrakt: |
Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials' resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices' critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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