| Autor: |
Yang, Weidong, Hu, Jiangtao, Lowe-webb, Roger, Korlahalli, Rahul, Shivaprasad, Deepak, Sasano, Hiroki, Liu, Wei, Mui, David S. L. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Semiconductor Manufacturing; Nov2004, Vol. 17 Issue 4, p564-572, 9p |
| Abstrakt: |
As lithographic technology drives the minimum integrated circuit feature size toward 0.1 pm and below, process tolerances for critical-dimension profile excursion are becoming increasingly demanding. In response, optical critical dimension metrology (0CD), an optical-wavelength light-diffraction technique, is emerging as a fast, accurate, and nondestructive sub-100-nm linewidth and profile monitor. As such, a detailed understanding of the correlation between OCD and existing metrology tools is required. Correlation between CD measurements using OCD and CD-scanning electron microscopy (SEM) techniques is investigated by measuring two types of important structures, e.g., photoresist gratings on a polysilicon gate film stack and shallow trench isolation. Intragrating CD variation is shown to account for scatter in the correlation plot. A qualitative line-profile correlation between cross-section SEM (X-SEM) and OCD is presented for photoresist gratings in a focus exposure matrix. Finally, a summary of the capability of OCD as a monitor for various processing stages is presented. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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