| Autor: |
Tsuda, Yuhzoh, Mouri, Hirokazu, Araki, Masahiro, Yuasa, Takayuki, Taneya, Mototaka |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/15/2004, Vol. 96 Issue 12, p7136-7140, 5p, 1 Chart, 6 Graphs |
| Abstrakt: |
We investigated the growth of the GaN-rich side of GaNP films using metal-organic chemical-vapor deposition. The results of Auger electron spectroscopy suggest that phosphorus atoms incorporated into the film would he substituted on gallium sites rather than on nitrogen sites. Using x-ray diffraction, we have revealed that such GaNP films belong to a hexagonal system and that the relationship of the orientation between the GaNP film and its underlying GaN layer is [0001]GaNP and [1010 ]GaNP and [1010]GaNP¦¦[1010]GaN. Moreover, it was found that the lattice constants of GaNP were smaller than those ot bulk GaN and there was no phase separation. We have also confirmed that the changes in these lattice constants were almost proportional to the phosphorus concentration included in the entire GaNP film thickness and that they decreased with an increase in the phosphorus concentration. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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