| Autor: |
Chen, Chun-Nan |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 12/15/2004, Vol. 96 Issue 12, p7374-7378, 5p, 4 Graphs |
| Abstrakt: |
This paper develops a k·p method with analytical expressions to investigate the optical anisotropy of (11N)-oriented In0.53Ga0.47As/InP quantum wells. The proposed method is not only more straightforward than the conventional k·p method, but also more efficient. The present results reveal that in-plane anisotropy is associated with low-symmetry crystal microstructures. Hence, of the various (11N)-oriented quantum wells considered in the present study, the low-symmetry (110) sample exhibits the most obvious anisotropy, while the high-symmetry (001) and (111) samples exhibit isotropy. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
