| Autor: |
Dube, Paras, Parwani, Suraj, Kaurav, Netram |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2021, Vol. 2369 Issue 1, p1-5, 5p |
| Abstrakt: |
Thermal decomposition method was used to synthesis non-stoichiometric nickel oxide at different sintering temperatures upto 1100 °C. X-ray diffraction method along with ritvield refinement is used for structure cauterization of synthesized compounds. The dielectric constant and dielectric loss was found to have dependency on stoichiometry. These results were interpreted as the decomposition temperature increases, which heals the defects present in the non-stoichiometric nickel oxide and Loss peak shifts to the higher frequency which is due to long-range hopping of charge carriers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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