| Autor: |
Maeda, Yasutaka, Park, Kyung Eun, Hiroki, Mizuha, Komatsu, Yuki, Ohmi, Shun-ichiro |
| Zdroj: |
Japanese Journal of Applied Physics; Jun2019, Vol. 58 Issue 6, p1-5, 5p |
| Abstrakt: |
In this study, a depletion load pMOS inverter, which is called an enhancement/depletion (E/D) inverter, with a single organic semiconductor was demonstrated utilizing threshold voltage controlled pentacene-based organic field-effect transistor (OFET) realized by a nitrogen-doped (N-doped) LaB6 interfacial layer (IL). It was found that a N-doped LaB6 IL introduced in drive OFET realized the inverter characteristic with logic swing of 4.3 V at an operation voltage of −5 V. In addition, a common-gate electrode structure for drive and load OFETs was demonstrated, which would contribute to further scaling and high integration of organic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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