Influence of YVO4 and BiРxV1 – xO4 Nanoscale Layers on the Surface of InP on the Thermal Oxidation of the Semiconductor, Phase Composition and Morphology of Films.

Autor:	Tomina, E. V., Sladkopevtsev, B. V., Mittova, I. Ya., Kopytin, S. S., Baranova, V. A.
Zdroj:	Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Jul2021, Vol. 15 Issue 4, p702-711, 10p
Abstrakt:	The strong chemical-stimulating and modifying effect of BiРxV1 – xO4 on the process of InP thermal oxidation, which consists in blocking the diffusion of non-oxidized In into the forming films and the intense formation of a vanadate-phosphate skeleton, is established. The presence of V2O5 in the synthesized films, which has catalytic activity in the processes under study, with an effective activation energy of about 50 kJ/mol and a large relative increase in the thickness throughout the entire process, suggests a catalytic component of the oxidation mechanism. The formation of the phosphate skeleton of the films during the oxidation of YVO4/InP occurs due to secondary interactions of the oxidized components of the semiconductor similar to the mechanism of the intrinsic oxidation of indium phosphide. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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