| Autor: |
Wei, Guoshuai, Hao, Ruiting, Li, Xiaoming, Wang, Yunpeng, Fang, Shuiliu, Guo, Jie, Ma, Xiaole, Ren, Yang, Li, Junbin, Kong, JinCheng, Wang, Guowei, Xu, Yingqiang, Wu, Donghai, Niu, Zhichuan |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/21/2021, Vol. 130 Issue 7, p1-7, 7p |
| Abstrakt: |
We fabricated a high-performance InAs/GaSb type-II superlattice infrared detector. The tolerance of various sizes of detector irradiated with 1-MeV electrons was characterized. X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) measurements demonstrated the high quality of the materials. The response spectrum had a 50% cutoff wavelength of 8.85 μm. Irradiation with 1-MeV electrons caused a significant increase in the dark current density from 2.54 × 10−3 to 2.58 × 10−1 A/cm2 at Vb = –0.03 V. The 1-MeV electron irradiation mainly caused displacements in the device, which had a significant impact on the generation-recombination dark current and surface leakage current. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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