Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO2 for Analog In-Memory Computing Applications.
| Autor: | Consiglio, Steven, Hisashi Higuchi, Takashi Ando, Jamison, Paul, Soon-Cheon Seo, Dexin Kong, Youngseok Kim, Tapily, Kandabara, Clark, Robert D., Hopstaken, Marinus, Cartier, Eduard, Takaaki Tsunomura, Wajda, Cory S., Soave, Robert, Narayanan, Vijay, Leusink, Gert J. |
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| Zdroj: | ECS Meeting Abstracts; 2021, Vol. MA2021-01 Issue 1, p994-994, 1p |
| Databáze: | Complementary Index |
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