A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.

Autor:	Liu, Sicheng, Tang, Xiaoyan, Song, Qingwen, Wang, Yuehu, Bai, Ruijie, Zhang, Yimen, Zhang, Yuming
Předmět:	SILICON carbide SILICON compounds SCHOTTKY barrier SEMICONDUCTOR-metal boundaries METAL semiconductor field-effect transistors
Zdroj:	IET Power Electronics (Wiley-Blackwell); Aug2021, Vol. 14 Issue 11, p2021-2026, 6p
Abstrakt:	In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations. The proposed structure features an integrated Schottky barrier diode on one side‐wall of the trench below the P‐base region, and an inserted thicker oxide layer between the polysilicon gate and source metal on one side‐wall of the trench. The simulation results show that compared with Infineon's CoolSiC™ Trench MOSFET, the proposed device decreases the gate charge Qg by 29.2%, leading to significantly improved figures of merit (Ron,sp × Qg). The reverse recovery charge Qrr and peak reverse recovery current (IRRM) are reduced by 64.1% and 66.0%, respectively. Meanwhile, the total switching energy loss decreases 36.7% for the dynamic performance. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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