| Autor: |
Shukla, Raghvendra, Kumar, Rashmi Ranjan, Pandey, Saurabh Kumar |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Electron Devices; Jul2021, Vol. 68 Issue 7, p3446-3452, 7p |
| Abstrakt: |
Tin-based perovskite solar cell (PSC) has witnessed a focus in recent years. In this article, an inverted p-i-n planar hetero-junction structure for FASnI3 PSC is realized using device simulation software. We have studied the effect of relative permittivity (εr), carrier lifetime (τ), and thickness on the performance of PSC. The fill factor (FF) is strongly dependent on carrier lifetime. In a uniformly doped device, maximum efficiency is obtained for high τ (> 50 ns). Furthermore, the transport of charge carrier to the electrode is connected to the electric field. For low εr, the electric field strength is high thus recombination of light generated carriers is low. The impact of different recombination effects on cell performance is also discussed. It is found that Shockley–Read–Hall (SRH) recombination is a major reason for the performance degradation of perovskite cells. The result shows that with optimized absorber properties, power conversion efficiency (PCE) 17.33% can be achieved. This study will aid researchers for better understanding of carrier dynamics process thus achieving high device efficiency in lead-free PSCs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
