| Autor: |
Pampori, Ahtisham Ul Haq, Ahsan, Sheikh Aamir, Dangi, Raghvendra, Goyal, Umakant, Tomar, Sanjay Kumar, Mishra, Meena, Chauhan, Yogesh Singh |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jul2021, Vol. 68 Issue 7, p3302-3307, 6p |
| Abstrakt: |
In this article, we present a surface-potential-based approach to model the bias-dependent effective velocity observed in AlGaN/GaN high-electron-mobility transistors (HEMTs) due to optical phonon scattering. Our model precisely reproduces the progressive decrease in the saturation velocity in GaN HEMTs with increasing gate voltages, as reported in the literature, which is predominantly due to the scattering of electrons, forming the high-density two-dimensional electron gas (2DEG), by optical phonons at high overdrive voltages. We show that this dependence differs from the traditional mobility degradation models in terms of its impact on the device current–voltage (I – V) characteristics and illustrate how the inclusion of a velocity saturation model also provides the model users with an additional handle for parameter extraction. The model is explicit and, by virtue of its Simulation Program with Integrated Circuit Emphasis (SPICE) compatibility, is readily implemented in the industry-standard Advanced SPICE Model for HEMTs (ASM-HEMTs) model and has been validated against experimental dc I – V and RF S-parameter measurements of an in-house GaN device. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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