| Autor: |
Wu, Pei-Yu, Chen, Min-Chen, Chang, Ting-Chang, Zheng, Hao-Xuan, Jin, Fu-Yuan, Tan, Yung-Fang, Tu, Yu-Fa, Tsai, Xin-Ying, Huang, Jen-Wei, Chang, Kuo-Jen, Liu, Guan-Shian, Tsai, Tsung-Ming |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Aug2021, Vol. 36 Issue 8, p1-5, 5p |
| Abstrakt: |
In the past, gate turn-off (GTO) thyristors were commonly used to either increase the length of the drift region or reduce the doping concentration to increase high-voltage and high-power applications. However, this results in an on-resistance (Ron) increase. In this study, we applied a supercritical fluid (SCF) treatment to devices which has the advantage of high permeability and low-temperature processing to passivate SiC-GTO bulk defects. After the proposed defect passivation, the breakdown voltage has been improved by 8% without increasing on-state resistance. In addition, the leakage current has also been suppressed more than 30% in average. This study also uses electrical analysis to understand the characteristics of the devices after SCF treatment, and then discusses the passivation mechanism of materials of the devices from this treatment. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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