| Autor: |
Yun, Sun Jin, Ko, Young-Wook, Lim, Jung Wook |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/22/2004, Vol. 85 Issue 21, p4896-4898, 3p, 4 Graphs |
| Abstrakt: |
The passivation of organic light-emitting diodes (OLEDs) with Al2O3 films containing small amounts of N (Al2O3:N) was investigated by plasma-enhanced atomic layer deposition using a direct rf plasma with a short pulse time. Luminance—voltage and current density—voltage curves of an OLED passivated with a 300 nm Al2O3:N film at 60 °C remained unchanged compared to those of nonpassivated OLED and 96% of the initial luminance were maintained even after operating for 850 h at 14 mA/cm2. The lifetime of an OLED with an 80 °C Al2O3:N film was 650 h, 6.2 times longer than that of a nonpassivated sample, although the luminance—voltage characteristics of the OLED were altered to a considerable extent. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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