| Autor: |
Wontae Chang, Kirchoefer, Steven W., Pond, Jeffrey M., Bellotti, Jeffrey A., Qadri, Syed B., Haeni, Jeffrey H., Schlom, Darrell G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/2004, Vol. 96 Issue 11, p6629-6633, 5p, 1 Black and White Photograph, 3 Charts, 6 Graphs |
| Abstrakt: |
Structural distortion of ferroelectric thin films caused by film strain has a strong impact on the microwave dielectric properties. SrTiO3 thin films epitaxially grown on (110) DyScO3 substrates using molecular beam epitaxy are extremely strained (i.e., ∼1% in-plane tensional strain) from 3.905 Å of bulk SrTiO3. The room-temperature in-plane dielectric constant and its tuning of the films at 10 GHz are observed to be 6000 and 75% with an electric field of 1 V/μm, respectively. The control of strain in SrTiO3 provides a basis for room-temperature tunable microwave applications by elevating its phase-transition peak to room temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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