Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes.

Autor: Bian, Z., Rae, K. J., King, B. C., Kim, D., Li, G., Thoms, S., Childs, D. T. D., Gerrard, N. D., Babazadeh, N., Reynolds, P., Grant, J., McKenzie, A. F., Orchard, J. R., Taylor, R. J. E., Hogg, R. A.
Předmět:
Zdroj: AIP Advances; Jun2021, Vol. 11 Issue 6, p1-5, 5p
Abstrakt: This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index