| Autor: |
De Souza, Daniele, Alhassan, Sultan, Alotaibi, Saud, Alhassni, Amra, Almunyif, Amjad, Albalawi, Hind, Kazakov, Igor P, Klekovkin, Alexey V, ZinovEv, Sergey A, Likhachev, Igor A, Pashaev, Elkhan M, Souto, Sergio, Gobato, Yara Galvăo, Galeti, Helder Vinicius Avanço, Henini, Mohamed |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Jul2021, Vol. 36 Issue 7, p1-12, 12p |
| Abstrakt: |
In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x = 5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction (XRD), micro-Raman at room temperature, and photoluminescence measurements as a function of temperature and laser excitation power (PEXC) were performed to investigate their structural and optical properties. XRD results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Bi-related defects in n- and p-doped GaAsBi alloys have important impact on the differences of their optical properties. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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