| Autor: |
Jeon, Gilsu, Seo, Taewon, Ko, Hyungmin, Park, Hyuk, Kwon, Jisu, Ha, Taeyong, Kim, Sungjee, Chung, Yoonyoung |
| Předmět: |
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| Zdroj: |
SID Symposium Digest of Technical Papers; May2021, Vol. 52 Issue 1, p777-779, 3p |
| Abstrakt: |
Quantum‐dot‐based a‐IGZO phototransistor has become one of the promising devices for image sensor application due to its bandgap tunability and solution‐process compatibility. However, the QD phototransistor with a‐IGZO, which contains a large amount of charge traps on the surface, exhibited slow photoresponse (τdecay >10 s). In this work, the photocurrent and decay time were significantly enhanced by 2.2 times and 73%, respectively, by introducing a self‐assembled monolayer (SAM), which effectively passivates the traps at the QD/a‐IGZO interface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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