Effect of concentration of Nd3+ on the photoluminescence and ferroelectric properties of Bi4-xNdxTi3O12 films.

Autor: Xu, Yudong, Hu, Kunzhuang, Shi, Min, Zuo, Ruzhong, Qiu, Guannan, Si, Zhuolin, Men, Enyang
Předmět:
Zdroj: Journal of Materials Science: Materials in Electronics; Jun2021, Vol. 32 Issue 12, p15653-15664, 12p
Abstrakt: Lead-free films of Bi4-xNdxTi3O12 were deposited on Pt(111)/Ti/SiO2/Si(100) substrate via spin-coating methods. It is shown that there are no secondary phases in the films of Bi4-xNdxTi3O12 and clear interfaces between the films of Bi4-xNdxTi3O12 and substrates when the films are annealed at 700 °C. And the films of Bi4-xNdxTi3O12 also exhibit a blue light emission peak at 437 nm and a yellow light emission peak at 580 nm. There are narrower band gaps, greater values of dielectric constant and lower values of dielectric loss when the concentration of Nd3+ varies from 0 to 0.85. And the films of Bi4-xNdxTi3O12 possess the minimum of band gap energy (2.67 eV). Moreover, the films of Bi4-xNdxTi3O12 exhibit minimal leakage current density and maximal remanent polarization, which is highly beneficial for the potential applications in multi-functional devices. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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