| Autor: |
Kim, Shinhee, Go, Seungwon, Kim, Sangwan |
| Zdroj: |
Japanese Journal of Applied Physics; Jun2021, Vol. 60 Issue SC, p1-7, 7p |
| Abstrakt: |
A recessed-channel tunnel field-effect transistor (RCTFET) with intrinsic Si layer between gate and source/drain is proposed and its electrical characteristics are examined by technology computer-aided design simulation for lower subthreshold swing (SS) and higher on-off current ratio (ION/IOFF) than conventional planar TFET. Although the SS and ION/IOFF of RCTFET can be improved by optimizing the length of the intrinsic Si layer (LT), there is a trade-off in terms of turn-on voltage (VON). To address this issue, a ferroelectric (FE) layer has been adopted to the gate stack for negative capacitance (NC) effects. Based on the study, the NC effects not only reduce VON but also enhance the SS and ION/IOFF characteristics. As a result, the optimized NC-RCTFET shows 3 times higher ION and 23 mV dec−1 smaller average SS with 1 V lower VON than the conventional RCTFET. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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