| Autor: |
Moon, Jeong-Sun, Grabar, Bob, Wong, Joel, Chuong, Dao, Arkun, Erdem, Morales, Didiel Vazquez, Chen, Peter, Malek, Christopher, Fanning, David, Venkatesan, Nivedhita, Fay, Patrick |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Jun2021, Vol. 42 Issue 6, p796-799, 4p |
| Abstrakt: |
We report 60-nm gate-length graded-channel AlGaN/GaN HEMTs fabricated with a mini-field-plate T-gate. The devices exhibit an extrinsic fT and $\text{f}_{\text {MAX}}$ of 156 GHz and 308 GHz, respectively. At 60-nm gate length, the fT*Lg of 9.4 GHz $\ast \mu \text{m}$ is comparable to that of conventional scaled short gate-length AlGaN/GaN HEMTs. Due to minimal current collapse, the graded-channel GaN HEMTs demonstrated linear RF power scaling up to 5.5 W/mm at 30 GHz. This results in a record $\text{f}_{\text {T}}~\ast $ power density product of 858 GHz $\ast \text{W}$ /mm for Ga-polar GaN devices, indicating the promise of this device architecture for mmW amplifiers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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