| Autor: |
Kwan, D. C. M., Kesaria, M., Anyebe, E. A., Alshahrani, D. O., Delmas, M., Liang, B. L., Huffaker, D. L. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/28/2021, Vol. 118 Issue 20, p1-7, 7p |
| Abstrakt: |
We report on a 10 μm InAs/GaSb type-II superlattice (T2SL) grown by molecular beam epitaxy on a GaAs substrate using an interfacial misfit (IMF) array and investigate the optical and structural properties in comparison with a T2SL grown on a GaSb substrate. The reference T2SL on GaSb is of high structural quality as evidenced in the high-resolution x-ray diffraction (HRXRD) measurement. The full width at half maximum (FWHM) of the HRXRD peak of the T2SL on GaAs is 5 times larger than that on GaSb. The long-wave infrared (LWIR) emission spectra were analyzed, and the observed transitions were in good agreement with the calculated emission energies. The photoluminescence (PL) intensity maxima (Imax) of ∼10 μm at 77 K is significantly reduced by a factor of 8.5 on the GaAs substrate. The peak fitting analysis of the PL profile indicates the formation of sub-monolayer features at the interfaces. PL mapping highlights the non-uniformity of the T2SL on GaAs which corroborates with Nomarski imaging, suggesting an increase in defect density. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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