| Abstrakt: |
Extruded samples of Bi 8 5 Sb 1 5 solid solutions doped with 0.0005 at.% Te were obtained and the electrical conductivity (σ) , thermoelectric power (Seebeck) (α) , Hall (R h) and thermal conductivity (χ) coefficients were investigated in the range ∼ 8 0 –300 K samples and magnetic field strength up to 7 4 × 1 0 4 A/m, as annealed after extrusion, non-irradiated with gamma-quanta and the same samples irradiated with gamma quanta at different doses. It was found that at low doses (1 Mrad) of irradiation, radiation defects (RDs) appear in the samples which play the role of donor centers, as a result of which the concentration of free electrons n , and, consequently the electrical conductivity σ increases, and the Seebeck coefficient α decreases. These defects, scattering the current carriers, reduce their mobility μ. With an increase in the radiation dose, the concentration of defects also increases and free carriers are captured at the level of the RD. In this regard, the concentration of charged carrier defects n and, consequently, σ of the sample decrease, while the Seebeck coefficient and mobility increase. The effect of a magnetic field on the electrical and thermal parameters of extruded solid solution samples also depends on the radiation dose in the sample. [ABSTRACT FROM AUTHOR] |
