| Autor: |
Han, Xu, Tsushima, Koki, Shirai, Takuto, Ishizaki, Takahiro, Shimomura, Kazuhiko |
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| Zdroj: |
Physica Status Solidi. A: Applications & Materials Science; May2021, Vol. 218 Issue 10, p1-6, 6p |
| Abstrakt: |
The lasing characteristics of separate‐confinement‐heterostructure multi‐quantum‐well (SCH‐MQW) laser diodes (LDs) grown on InP templates bonded to a SiO2/Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven‐quantum‐well‐structured LD are grown by low‐pressure metal–organic vapor‐phase epitaxy. After the pulsed power supply of a high‐mesa waveguide is tested with a surface electrode structure, the LD grown on an InP/SiO2/Si substrate is found to exhibit superior lasing characteristics compared to an LD grown on an InP/Si substrate, and the threshold current density is equivalent to that of a surface‐electrode‐structured LD grown on an InP substrate. The slope efficiency of the LD grown on the InP/SiO2/Si substrate is compared with that of an LD grown on an InP/Si substrate. [ABSTRACT FROM AUTHOR] |
| Databáze: |
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