Effect of the Electroformation Conditions on the Switching Stability of Memristors Based on Open "Sandwich" Structures in an Oxygen Medium.

Autor: Mordvintsev, V. M., Gorlachev, E. S., Kudryavtsev, S. E.
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Zdroj: Russian Microelectronics; May2021, Vol. 50 Issue 3, p146-154, 9p
Abstrakt: The object of research are samples of nonvolatile electrically alterable memory elements (memristors) based on TiN–TiO2–SiO2–W open "sandwich" structures, in which conductive nanostructures with electrically alterable characteristics are formed by the electroformation. The effect of the oxygen pressure and the electroformation conditions on the switching of the memory element is investigated. With the new experimental material, the earlier established character of the dependence of the oxygen threshold pressure (Pth) on the limiting current of switching (Ilim) for the pulse switching on of a memory element is confirmed. A shift in the Pth(Ilim) curve for different electroformation conditions, which can be explained by the corresponding change in the size of the conductive nanostructure, is demonstrated. Based on the obtained experimental data, changes in the size and specific surface resistance of the material of the conductive medium with varying limiting current of the electroformation Ilimf are estimated, which reveals an increase in the compactness of the nanostructure with a decreasing current. The earlier proposed mechanisms of the processes are clarified. A well-grounded method of the choice of the conditions of the electroformation for open sandwich structures is devised. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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