| Autor: |
Fang, Tao, Li, Ling-Qi, Xia, Guang-Rui, Yu, Hong-Yu |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Feb2021, Vol. 30 Issue 2, p1-5, 5p |
| Abstrakt: |
With technology computer-aided design (TCAD) simulation software, we design a new structure of gallium oxide on gallium–nitride Schottky barrier diode (SBD). The parameters of gallium oxide are defined as new material parameters in the material library, and the SBD turn-on and breakdown behavior are simulated. The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than GaN SBD. Also, to solve the lattice mismatch problem in the real epitaxy, we add a ZnO layer as a transition layer. The simulations show that the device still has good properties after adding this layer. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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