Channeling of Charged Particles Near the Surface of Semiconductors and Conducting Crystals.

Autor: Vysotskii, V. I., Vysotskyy, M. V., Maksyuta, N. V.
Zdroj: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Mar2021, Vol. 15 Issue 2, p302-308, 7p
Abstrakt: The features of the orientational motion and channeling of charged particles are considered. They move in a near-surface potential well whose structure is formed by the surface plane of a crystal and by the action of the vector potential of the electric current flowing through a crystal or along a conductor, near which a nonconducting crystal is located. The width of the potential well forming the near-surface channeling mode depends on the crystal thickness and the electric current density and can vary in the range from several millimeters to a few micrometers as the current density varies in the range of 1–1000 A/cm2. The process of near-surface channeling in the field of a plane conductor with current provides the abnormally weak deceleration of particles and can be used to transport particle beams along conductors with current over large distances. A similar axial channeling mode is characterized by the complete suppression of the scattering and deceleration of ion beams during their motion in free space along the surface of a cylindrical conductor with current. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index