Influence of Gate Dielectrics of Field-Effect Graphene Transistors on Current-Voltage Characteristics.

Autor:	Abramov, I. I., Kolomeitseva, N. V., Labunov, V. A., Romanova, I. A., Shcherbakova, I. Yu.
Předmět:	FIELD-effect transistors CURRENT-voltage characteristics DIELECTRICS DIELECTRIC materials TRANSISTORS GRAPHENE
Zdroj:	Russian Microelectronics; Mar2021, Vol. 50 Issue 2, p118-125, 8p
Abstrakt:	Field-effect graphene transistors (FGTs) based on single-layer graphene using the developed simplified combined self-consistent model are simulated. It is used to compare the results of calculating the current–voltage (I–V) characteristics of five devices with the same geometric parameters with different materials of the gate dielectric of the upper gate. The influence of the thickness of the dielectrics of the upper and lower gates on the transfer I–V characteristic of a dual-gate FGTs is analyzed [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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