| Autor: |
Cho, M.-H., Chung, K.B., Chang, H.S., Moon, D.W., Park, S.A., Kim, Y.K., Jeong, K., Whang, C.N., Lee, D.W., Ko, D.-H., Doh, S.J., Lee, J.H., Lee, N.I. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/1/2004, Vol. 85 Issue 18, p4115-4117, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Interfacial reactions as a function of the stack structure of Al2O3 and HfO2 grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an Al2O3 film with a buffer layer of HfO2, reactions between the Al2O3 and Si layers were suppressed, while a HfO2 film with an Al2O3 buffer layer on the Si readily interacted with Si, forming a Hf–Al–Si–O compound. The thickness of the interfacial layer increased dramatically after an annealing treatment in which a buffer layer of Al2O3 was used, while no change in thickness was observed in the film in which a HfO2 buffer layer was used. Moreover, the stoichiometric change caused by a different reaction process altered the chemical state of the films, which affected charge trapping and the interfacial trap density. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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