| Autor: |
Maltez, R. L., Liliental-Weber, Z. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/1999, Vol. 85 Issue 2, p1105, 9p, 3 Black and White Photographs, 1 Diagram, 2 Charts, 2 Graphs |
| Abstrakt: |
Presents information on a study which examined the characteristic emission of Erbium-implanted and annealed, low-temperature grown gallium arsenide (GaAs) doped and undoped samples. Experimental procedures; Results and discussion; Photoluminescence measurements; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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