| Autor: |
Malin, T. V., Milakhin, D. S., Mansurov, V. G., Kozhukhov, A. S., Protasov, D. Yu., Loshkarev, I. D., Zhuravlev, K. S. |
| Zdroj: |
Optoelectronics Instrumentation & Data Processing; Sep2020, Vol. 56 Issue 5, p485-491, 7p |
| Abstrakt: |
It is demonstrated that it is possible to use the ammonia molecular beam epitaxy for growing structurally perfect high-ohmic GaN layers which allow generating SiN/Al(Ga)N/GaN heterostructures for transistors with a high mobility of electrons. The growth conditions are determined for GaN layers with smooth surface morphology (with a mean-squared deviation of 2 nm) appropriate for creating sharp heteroboundaries. The possibility of improving the crystalline perfection of GaN layer due to the use of buffer high-temperature AlN layer (with the growth temperature above 940 C) is demonstrated. It was shown that in situ surface passivation of Al(Ga)N/GaN heterostructures by the ultrathin SiN layer allows generating normally closed transistors with unprecedented low values of the current collapse (). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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