Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped in situ with Er and Eu During Molecular Beam Epitaxy.
| Autor: | Katchkanov, V., Mosselmans, J. F. W., Dalmasso, S., O'Donnell, K. P., Martin, R. W., Briot, O., Rousseau, N., Halambalakis, G. |
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| Zdroj: | MRS Online Proceedings Library; 2003, Vol. 798 Issue 1, p45-50, 6p |
| Databáze: | Complementary Index |
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