Improved Performance and Reliability in Aggressively-Scaled Nmos and Pmos Fets: I) Monolayer Interface Nitridation and II) Replacement of Stacked Oxide/Nitride Dielectrics with Optimized Oxide/Oxynitride Stacks.
Autor: | Yang, Hanyang, Niimi, Hiro, Lucovsky, Gerry |
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Zdroj: | MRS Online Proceedings Library; 1999, Vol. 592 Issue 1, p185-190, 6p |
Databáze: | Complementary Index |
Externí odkaz: |