Improved Performance and Reliability in Aggressively-Scaled Nmos and Pmos Fets: I) Monolayer Interface Nitridation and II) Replacement of Stacked Oxide/Nitride Dielectrics with Optimized Oxide/Oxynitride Stacks.

Autor: Yang, Hanyang, Niimi, Hiro, Lucovsky, Gerry
Zdroj: MRS Online Proceedings Library; 1999, Vol. 592 Issue 1, p185-190, 6p
Databáze: Complementary Index