| Autor: |
Mamedov, T. N., Andreica, D., Andrianov, D. G., Herlach, D., Gorelkin, V. N., Gritsai, K. I., Zhukov, V. A., Stoikov, A. V., Zimmermann, U. |
| Předmět: |
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| Zdroj: |
JETP Letters; 9/10/2004, Vol. 80 Issue 5, p339-342, 4p |
| Abstrakt: |
The effect of uniaxial compression on the behavior of shallow aluminum acceptor centers in silicon has been studied. The μAl impurity atoms were created by implanting negative muons into silicon single crystals doped with phosphorus to 1.6×1013cm–3 (sample 1) and 1.9×1013cm–3 (sample 2). The muon polarization was studied in the temperature range 10–300 K. Measurements were performed in a magnetic field of 2.5 kG oriented perpendicularly to the muon spin. The samples were oriented so that the selected crystal axis ([111] and [100] in samples 1 and 2, respectively), the magnetic field, and the initial muon-spin polarization were mutually perpendicular. External pressure applied to the sample along the indicated crystal axis changed both the absolute value of the acceptor magnetic-moment relaxation rate and the character of its temperature dependence. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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