| Autor: |
Das, S., Ghadai, R., Krishna, A., Trivedi, A., Bhujel, R., Rai, S., Shivakoti, I., Kalita, K. |
| Předmět: |
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| Zdroj: |
Iranian Journal of Materials Science & Engineering; Dec2020, Vol. 17 Issue 4, p25-32, 8p |
| Abstrakt: |
Graphene oxide (GO) and reduced graphene oxide (rGO) is a semiconductor device which finds many applications in the various electronic devices. In the present study GO and rGO thin sheets have been grown over Si wafers using Hummer's and modified Hummer's methods and a comparison in the properties of the coatings have been carried out. The morphology of the sheets characterized by SEM revealed similar transparent sheet like structure for both methods of synthesis. The diffraction patterns of GO and rGO prepared with modified Hummer's method showed peak shift to lower diffraction angle from 9.96° to 9.63° and 26.4° to 26.3° respectively. The diffraction peaks were observed at diffraction phase of 001 and 002 crystal plane. FTIR spectra revealed presence of oxygen functional groups in GO thin sheets whereas peaks for oxygen functionalities were absent in rGO. The polarization curve indicated similar corrosion resistance of GO and rGO thin sheets grown under Hummer's and modified Hummer's. Capacitive property of rGO is better than GO as observed by the electrochemical analysis of GO and rGO. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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