Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD.

Autor:	Zhang, Sheng, Liu, Xinyu, Wei, Ke, Huang, Sen, Chen, Xiaojuan, Zhang, Yichuan, Zheng, Yingkui, Liu, Guoguo, Yuan, Tingting, Wang, Xinhua, Yin, Haibo, Yao, Yao, Niu, Jiebin
Předmět:	METAL semiconductor field-effect transistors BREAKDOWN voltage MODULATION-doped field-effect transistors GENERATIVE adversarial networks ATOMIC layer deposition DIELECTRICS WIDE gap semiconductors ALUMINUM gallium nitride
Zdroj:	IEEE Transactions on Electron Devices; Jan2021, Vol. 68 Issue 1, p49-52, 4p
Abstrakt:	A Ka-band AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with SiN gate dielectric grown by plasma-enhanced atomic layer deposition (PEALD) is demonstrated. The gate reverse leakage current in a controlled HEMT is reduced by about three orders of magnitude by the PEALD-SiN, contributing to an improved breakdown voltage of 92.5 V (source–drain separation of 2.0~μm) in the fabricated MIS-HEMTs. The MIS-HEMTs also feature small threshold voltage hysteresis in dc transfer and capacitance–voltage characterizations, suggesting a good PEALD-SiN/AlGaN interface. The fabricated MIS-HEMTs deliver a high output power density of 7.16 W/mm and a peak power-added efficiency of 60.3%, respectively, at VDS = 30 V and VDS = 10 V in pulse mode at 28 GHz. PEALD-SiN could be a compelling gate dielectric for fabrication of high-power and high-efficiency MIS-HEMTs. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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