| Autor: |
Madhuri, K., Kannan, P. K., Yadav, Brijesh Singh, Chaudhari, Sushmita, Dhage, Sanjay R., Dey, Suhash Ranjan |
| Předmět: |
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| Zdroj: |
Journal of Materials Science: Materials in Electronics; Jan2021, Vol. 32 Issue 2, p1521-1527, 7p |
| Abstrakt: |
A low cost, non-vacuum process involving spin coating of metallic precursors followed by selenization was substantiated for the fabrication of CIGS (CuInxGa(1−x)Se2) thin film absorber. Spin coating of CIG precursors using environmentally benign solvents and studying the effects of various heat treatments on the spin-coated CIG precursor film leads to high-quality crystalline CIGS thin films with minimum carbon impurities. In this work, effects of various heat treatments of CIG precursor (heat treatment of precursor films after each individual run of spin coating using hot plate, using air dryer, without any pre-heat treatment and heating of 30-run coated sample on hot plate for 30 mins) followed by selenization has been investigated and being reported. The as-prepared CIGS thin film samples are characterized by X-ray diffraction (XRD), Raman spectroscopy (RS), Field emission scanning electron microscopy (FESEM), UV-Vis-IR spectroscopy and X-ray photo electron spectroscopy. From XRD pattern and Raman spectra, MoSe2 phase is also observed along with tetragonal chalcopyrite CIGS phase. Through FESEM and EDS, it is observed that heating each individual run has resulted a high-quality compact dense film with minimum carbon composition. XPS also confirms the minimum carbon composition in case of preheating individual run. From UV-Vis spectra, the bandgap of the prepared CIGS material is found to be 1.5 eV, essential for the cell fabrication. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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