Non-routine Dopant, Impurity and Stoichiometry Characterization of SiGe, SiON and Ultra-low Energy B-implanted Si Using Secondary Ion Mass Spectrometry.

Autor: Magee, Charles W., Buyuklimanli, Temel H., Marino, John W., Novak, Steven W., Sahiner, M. Alper
Zdroj: MRS Online Proceedings Library; 2002, Vol. 717 Issue 1, p1-10, 10p
Databáze: Complementary Index